BUX98C high power npn silicon transistor n sgs-thomson preferred salestype n npn transistor n high voltage capability n high current capability n fast switching speed applications: n high frequency and efficency converters n linear and switching industrial equipment description the BUX98C is a silicon multiepitaxial mesa npn transistor in jedec to-3 metal case, intended for use in switching and industrial applications from single and three-phase mains operations. internal schematic diagram june 1997 absolute maximum ratings symbol parameter value unit v cer collector-emitter voltage (r be 0 w ) 1200 v v ces collector-emitter voltage (v be = 0) 1200 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 30 a i cm collector peak current (t p < 5 ms) 60 a i cmp collector peak current non repetitive 80 a i b base current 8 a i bm base peak current (t p < 5 ms) 30 a p tot total dissipation at t c = 25 o c250w t stg storage temperature -65 to 200 o c t j max. operating junction temperature 200 o c 1 2 to-3 (version r) 1/4
thermal data r thj-case thermal resistance junction-case max 0.7 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cer collector cut-off current (r be = 10 w ) v ce = v ces v ce = v ces t case = 125 o c 1 8 ma ma i ces collector cut-off current (v be = 0 ) v ce = v ces v ce = v ces t case = 125 o c 1 6 ma ma i ceo collector cut-off current (i b = 0) v ce = v ceo 2ma i ebo emitter cut-off current (i c = 0) v cb = 5 v 2 ma v ceo(sus) * collector-emitter sustaining voltage i c = 100 ma 700 v v ce(sat) * collector-emitter saturation voltage i c = 12 a i b = 3 a i c = 16 a i b = 5 a i c = 20 a i b = 8 a 1.5 2 3 v v v v be(sat) * base-emitter saturation voltage i c = 12 a i b = 3 a i c = 20 a i b = 8 a 1.6 2 v v t on t s t f turn-on time storage time fall time resistive load v cc = 250 v i c = 12 a i b1 = - i b2 = 3 a 0.5 1.5 0.2 1 3 0.8 m s m s m s * pulsed: pulse duration = 300 m s, duty cycle = 1.5 % BUX98C 2/4
dim. mm inch min. typ. max. min. typ. max. a 11.7 0.460 b 0.96 1.10 0.037 0.043 c 1.70 0.066 d 8.7 0.342 e 20.0 0.787 g 10.9 0.429 n 16.9 0.665 p 26.2 1.031 r 3.88 4.09 0.152 0.161 u 39.50 1.555 v 30.10 1.185 e b r c d a p g n v u o p003n to-3 (version r) mechanical data BUX98C 3/4
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications ment ioned in this publication are subject to change without noti ce. this publication supersedes and replaces all info rmation previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in l ife support dev ices or systems without express written approval of s gs-thomson microelectonics. ? 1997 sgs-thomson microelectronics - printed in it aly - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - canada - china - france - germany - hong kong - i taly - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . BUX98C 4/4
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